Silicon Carbide, Sapphire & Gallium Nitride Substrate Preparation
Gain a deeper understanding on preparing Silicon Carbide, Sapphire & Gallium Nitride substrates.
Cost reduction in semi-conductor device production remains strongly steered by volume and potential yield. Compared to traditional semiconductor technology, Silicon Carbide, Sapphire & Gallium Nitride are three increasingly popular materials capable of providing competitive cost reductions. This results in boosted productivity and reduced damage risk of expensive wafers.
Download Logitech’s application note to obtain process requirements and system specifications required in order to produce Sapphire, Silicon Carbide and Gallium Nitride polished wafers.
Silicon Carbide, Sapphire & Gallium Nitride Substrate wafer processing with the PM6 Precision Lapping & Polishing System offers:
- Faster total cycle times and MRR up to three times that of existing Logitech systems
- An optimal Material Removal Rate (MRR) of 6 microns per hour with Sapphire and 1-2 microns per hour with Silicon Carbide.
- Impressive process repeatability, precision, TTV and flatness control
Embracing the cutting edge – you’re in safe hands.